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© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 × 109 cmHz1/2/W at 25 μA and a maximum of 6.2 × 108 cmHz1/2/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption.

Details

Title
Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process
Author
Guo, Yaozu 1   VIAFID ORCID Logo  ; Ma, Haolan 1 ; Jiang, Lan 1 ; Liao, Yiming 2 ; Ji, Xiaoli 1 

 College of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China 
 College of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China 
First page
1869
Publication year
2022
Publication date
2022
Publisher
MDPI AG
e-ISSN
2072666X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2748373674
Copyright
© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.