- Preview Available
- Scholarly Journal
Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
Moirangthem, Borish; Meitei, Pheiroijam Nonglen; Debnath, Anil Krishna; Singh, Naorem Khelchand.
Journal of Materials Science. Materials in Electronics; New York Vol. 34, Iss. 4, (Feb 2023): 306.
DOI:10.1007/s10854-022-09809-y
This is a limited preview of the full PDF
Try and log in through your library or institution to see if they have access.