Content area

Abstract

This paper studies the deposition of Hafnium Oxide (HfO2) thin films (TF) based on forming-free resistive random access memory (RRAM) devices using the method of electron beam evaporation. X-ray diffraction (XRD) analysis confirmed the amorphous nature of the deposited TF. The cross-sectional Field Emission Gun Scanning Electron Microscope (FEG-SEM) image of HfO2 TF shows a growth of ~ 134 nm thickness. Moreover, Energy-Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) determine the purity and chemical states of the sample, respectively. XPS also demonstrated the presence of oxygen vacancies in HfO2 TF responsible for enhanced resistive switching. HfO2 TF device exhibited forming-free resistive switching characteristics with stable retention of > 103 s and good endurance up to 1500 cycles at the reading voltage of + 1.4 V. The current–voltage (I–V) linear fitting reveals that in the charge transmission mechanism, Space Charge-Limited Current (SCLC) behaviour and Ohmic conduction dominate in the High Resistance State (HRS) and Low Resistance State (LRS), respectively. In addition, the device also recorded an excellent OFF/ON ratio (resistance window) in the order of ~ 102, which makes it a promising candidate for resistive switching non-volatile memory application.

Details

Title
Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
Author
Moirangthem, Borish 1 ; Meitei, Pheiroijam Nonglen 1 ; Debnath, Anil Krishna 2 ; Singh, Naorem Khelchand 1   VIAFID ORCID Logo 

1  National Institute of Technology, Department of Electronics and Communication Engineering, Dimapur, India (GRID:grid.419487.7) (ISNI:0000 0000 9191 860X) 
2  Bhabha Atomic Research Centre, Gas Sensing Devices Section, Technical Physics Division, Trombay, India (GRID:grid.418304.a) (ISNI:0000 0001 0674 4228) 
Pages
306
Publication year
2023
Publication date
Feb 2023
Publisher
Springer Nature B.V.
ISSN
09574522
e-ISSN
1573482X
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1007/s10854-022-09809-y
ProQuest document ID
2769445004
Copyright
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.