Recent advances in the ab initio theory of solid-state defect qubits

Abstract

Solid-state defects acting as single photon sources and quantum bits are leading contenders in quantum technologies. Despite great efforts, not all the properties and behaviours of the presently known solid-state defect quantum bits are understood. Furthermore, various quantum technologies require novel solutions, thus new solid-state defect quantum bits should be explored to this end. These issues call to develop ab initio methods which accurately yield the key parameters of solid-state defect quantum bits and vastly accelerate the identification of novel ones for a target quantum technology application. In this review, we describe recent developments in the field including the calculation of excited states with quantum mechanical forces, treatment of spatially extended wavefunctions in supercell models, methods for temperature-dependent Herzberg–Teller fluorescence spectrum and photo-ionisation thresholds, accurate calculation of magneto-optical parameters of defects consisting of heavy atoms, as well as spin-phonon interaction responsible for temperature dependence of the longitudonal spin relaxation T₁ time and magneto-optical parameters, and finally the calculation of spin dephasing and spin-echo times. We highlight breakthroughs including the description of effective-mass like excited states of deep defects and understanding the leading microscopic effect in the spin-relaxation of isolated nitrogen-vacancy centre in diamond.