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Abstract
Quantum states of light and matter can be manipulated on the nanoscale to provide a technological resource for aiding the implementation of scalable photonic quantum technologies. Experimental progress relies on the quality and efficiency of the coupling between photons and internal spin states of quantum emitters. Here we demonstrate a nanophotonic waveguide platform with embedded quantum dots (QDs) that enables both Purcell-enhanced emission and strong chiral coupling. The design uses slow-light effects in a glide-plane photonic crystal waveguide with QD tuning to match the emission frequency to the slow-light region. Simulations were used to map the chirality and Purcell enhancement depending on the position of a dipole emitter relative to the air holes. The highest Purcell factors and chirality occur in separate regions, but there is still a significant area where high values of both can be obtained. Based on this, we first demonstrate a record large radiative decay rate of 17 ± 2 ns−1 (60 ± 6 ps lifetime) corresponding to a 20 ± 2 fold Purcell enhancement. This was achieved by electric-field tuning of the QD to the slow-light region and quasi-resonant phonon-side band excitation. We then demonstrate a 5 ± 1 fold Purcell enhancement for a dot with high degree of chiral coupling to waveguide modes, substantially surpassing all previous measurements. Together these demonstrate the excellent prospects for using QDs in scalable implementations of on-chip spin-photonics relying on chiral quantum optics.
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1 University of Sheffield, Department of Physics and Astronomy, Sheffield, UK (GRID:grid.11835.3e) (ISNI:0000 0004 1936 9262); University of Cambridge, Cavendish Laboratory, Cambridge, UK (GRID:grid.5335.0) (ISNI:0000000121885934); Queen’s University Belfast, School of Mathematics and Physics, Belfast, UK (GRID:grid.4777.3) (ISNI:0000 0004 0374 7521)
2 University of Sheffield, Department of Physics and Astronomy, Sheffield, UK (GRID:grid.11835.3e) (ISNI:0000 0004 1936 9262)
3 University of Sheffield, EPSRC National Epitaxy Facility, Department of Electronic and Electrical Engineering, Sheffield, UK (GRID:grid.11835.3e) (ISNI:0000 0004 1936 9262)