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© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

Skyrmions are promising for the next generation of spintronic devices, which involves the production and transfer of skyrmions. The creation of skyrmions can be realized by a magnetic field, electric field, or electric current while the controllable transfer of skyrmions is hindered by the skyrmion Hall effect. Here, we propose utilizing the interlayer exchange coupling induced by the Ruderman–Kittel–Kasuya–Yoshida interactions to create skyrmions through hybrid ferromagnet/synthetic antiferromagnet structures. An initial skyrmion in ferromagnetic regions could create a mirroring skyrmion with an opposite topological charge in antiferromagnetic regions driven by the current. Furthermore, the created skyrmions could be transferred in synthetic antiferromagnets without deviations away from the main trajectories due to the suppression of the skyrmion Hall effect in comparison to the transfer of the skyrmion in ferromagnets. The interlayer exchange coupling can be tuned, and the mirrored skyrmions can be separated when they reach the desired locations. Using this approach, the antiferromagnetic coupled skyrmions can be repeatedly created in hybrid ferromagnet/synthetic antiferromagnet structures. Our work not only supplies a highly efficient approach to create isolated skyrmions and correct the errors in the process of skyrmion transport, but also paves the way to a vital information writing technique based on the motion of skyrmions for skyrmion-based data storage and logic devices.

Details

Title
Mirroring Skyrmions in Synthetic Antiferromagnets via Modular Design
Author
Deng, Panluo 1 ; Zhuo, Fengjun 2   VIAFID ORCID Logo  ; Li, Hang 1   VIAFID ORCID Logo  ; Cheng, Zhenxiang 3 

 School of Physics and Electronics, Henan University, Kaifeng 475004, China 
 School of Physics Science and Technology, ShanghaiTech University, Shanghai 201210, China 
 Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, Innovation Campus, University of Wollongong, Squires Way, North Wollongong, NSW 2500, Australia 
First page
859
Publication year
2023
Publication date
2023
Publisher
MDPI AG
e-ISSN
20794991
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2785205637
Copyright
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.