Abstract
Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strain around multi-stacking QDs, low thermal excitation energy, and short carrier lifetime, lead to its low conversion efficiency. In recent years, many efforts have been made from different aspects. In this paper, we focus on In(Ga)As QD-IBSC, list the experimental technologies used to improve the performance of the cell and review the recent research progress. By analyzing the effects of different technologies on conversion efficiency, the development direction of the In(Ga)As QD-IBSC in the future is proposed.
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Details
1 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China (GRID: grid.9227.e) (ISNI: 0000000119573309); Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China (GRID: grid.410726.6) (ISNI: 0000 0004 1797 8419)
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China (GRID: grid.9227.e) (ISNI: 0000000119573309); School of Integrated Circuits, University of Chinese Academy of Sciences, 100049, Beijing, China (GRID: grid.410726.6) (ISNI: 0000 0004 1797 8419)
3 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China (GRID: grid.9227.e) (ISNI: 0000000119573309); Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China (GRID: grid.410726.6) (ISNI: 0000 0004 1797 8419); School of Integrated Circuits, University of Chinese Academy of Sciences, 100049, Beijing, China (GRID: grid.410726.6) (ISNI: 0000 0004 1797 8419); Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, 100083, Beijing, China