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© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

Two-dimensional (2D) magnetic semiconductors exhibit unique combination of electronic and magnetic properties, holding great promise in potential applications such as spintronics and magneto-optics. However, many of them are air-sensitive, and their properties can be significantly altered upon exposure to air. Here, we showed an optical spectroscopic investigation of the effects of air-degradation on few-layered van der Waals (vdW) magnetic semiconductor Cr2Ge2Te6. It was found that although the partially degraded few-layered Cr2Ge2Te6 showed a significant Raman redshift and a split of Eg peak at room temperature, the magneto-optic Kerr hysteresis loop can remain largely unchanged below the Curie temperature. Temperature-dependent Raman measurements further revealed characteristic blueshifts of phonon energy, which were associated with the ferromagnetic phase transition in partially degraded Cr2Ge2Te6, in agreement with Kerr measurements. Our results provide an optical spectroscopic insight into the air-instability of 2D magnetic semiconductors, and contribute to a better understanding of the relationship between phonon modes and long-range spin order at the presence of defects in ultra-thin vdW magnetic semiconductors.

Details

Title
An Optical Spectroscopic Study of Air-Degradation of van der Waals Magnetic Semiconductor Cr2Ge2Te6
Author
Woye Pei 1 ; Xiong, Zhiren 2 ; Liu, Yingjia 3 ; Wu, Xingguang 2 ; Zheng Vitto Han 4   VIAFID ORCID Logo  ; Zhao, Siwen 5 ; Zhang, Tongyao 2 

 State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China 
 State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China 
 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China; School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China 
 State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China; Liaoning Academy of Materials, Shenyang 110016, China 
 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China; School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China; Liaoning Academy of Materials, Shenyang 110016, China 
First page
104
Publication year
2023
Publication date
2023
Publisher
MDPI AG
e-ISSN
23127481
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2806552541
Copyright
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.