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Abstract
Industrial production of single-chirality carbon nanotubes is critical for their applications in high-speed and low-power nanoelectronic devices, but both their growth and separation have been major challenges. Here, we report a method for industrial separation of single-chirality carbon nanotubes from a variety of raw materials with gel chromatography by increasing the concentration of carbon nanotube solution. The high-concentration individualized carbon nanotube solution is prepared by ultrasonic dispersion followed by centrifugation and ultrasonic redispersion. With this technique, the concentration of the as-prepared individualized carbon nanotubes is increased from about 0.19 mg/mL to approximately 1 mg/mL, and the separation yield of multiple single-chirality species is increased by approximately six times to the milligram scale in one separation run with gel chromatography. When the dispersion technique is applied to an inexpensive hybrid of graphene and carbon nanotubes with a wide diameter range of 0.8–2.0 nm, and the separation yield of single-chirality species is increased by more than an order of magnitude to the sub-milligram scale. Moreover, with present separation technique, the environmental impact and cost of producing single-chirality species are greatly reduced. We anticipate that this method promotes industrial production and practical applications of single-chirality carbon nanotubes in carbon-based integration circuits.
Large-scale production of single-chirality carbon nanotubes has long been a major challenge. Here, authors report a simple, yet effective, method to increase the yield of gel chromatography separation of single-chirality carbon nanotubes by enabling significantly higher concentrations of raw nanotubes solution.
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1 Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Beijing, China (GRID:grid.9227.e) (ISNI:0000000119573309); University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419); Hebei University, Advanced Passivation Technology Lab, College of Physics Science and Technology, Baoding, China (GRID:grid.256885.4) (ISNI:0000 0004 1791 4722)
2 Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Beijing, China (GRID:grid.9227.e) (ISNI:0000000119573309); University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419); Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, China (GRID:grid.410726.6)
3 Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Beijing, China (GRID:grid.9227.e) (ISNI:0000000119573309); University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419)
4 Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Beijing, China (GRID:grid.9227.e) (ISNI:0000000119573309)
5 Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Beijing, China (GRID:grid.9227.e) (ISNI:0000000119573309); University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419); Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, China (GRID:grid.410726.6); Songshan Lake Materials Laboratory, Dongguan, China (GRID:grid.511002.7)
6 Tsinghua University, Department of Chemical Engineering, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)