One step hydrothermal synthesis of MoS2–SnO2 nanocomposite for resistive switching memory application

Abstract

Resistive switching random access memory (ReRAM) where the resistance of the active semiconducting layer can be changed as a function of applied voltage has been becoming popular due to its simple structure and design. In the present study, we have used MoS₂–SnO₂ nanocomposite as a resistive switching material, where the effect of MoS₂ weight percentage (0, 5, 7, and 10 wt.%) have been evaluated in terms of the structural, optical, and electrical properties changes of resulting nanocomposite using X-ray diffraction, UV–Visible Spectroscopy, Scanning electron microscopy, and Transmission electron microscopy techniques. The nanocomposite samples were synthesized using a simple hydrothermal technique and are spin-coated on commercially available ITO-PET substrate. The top metallic electrode was deposited by thermally evaporating Aluminium through a shadow mask resulting in Al/SnO₂/ITO-PET and Al/MoS₂–SnO₂/ITO-PET (5%, 7%, 10%) based resistive memory devices. The measured current–voltage (I–V) characteristics over the fabricated devices having different MoS₂ wt. % showed the increase in I_On/I_Off ratio (3, 6, and 25) with an increase in MoS₂ concentration.