It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
The gold wire lead bonding process is a key technology to realize the electrical connection between the chip and the external control circuit to be completed. This paper introduces the basic concept of lead bonding technology and analyzes the process parameters affecting the quality of lead bonding, mainly including ultrasonic power, ultrasonic time, and bonding pressure. The orthogonal test method is used to investigate the process parameters affecting the bonding quality of 25 μm gold wire. The optimal combination of process parameters A3B2C2 is determined, i.e., the ultrasonic power value is 90 mW, the ultrasonic time is 20 ms, and the bonding pressure is 40 gf, which improves the reliability of the wire bonding process.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Department of Microelectronics, Shanghai University , Shanghai 200000 , China
2 Shanghai Aure Technology Limited Company , Shanghai 200000 , China
3 Department of Microelectronics, Shanghai University , Shanghai 200000 , China; Shanghai Industrial µTechnology Research Institute , Shanghai 200000 , China; Shanghai Aure Technology Limited Company , Shanghai 200000 , China





