Abstract

The gold wire lead bonding process is a key technology to realize the electrical connection between the chip and the external control circuit to be completed. This paper introduces the basic concept of lead bonding technology and analyzes the process parameters affecting the quality of lead bonding, mainly including ultrasonic power, ultrasonic time, and bonding pressure. The orthogonal test method is used to investigate the process parameters affecting the bonding quality of 25 μm gold wire. The optimal combination of process parameters A3B2C2 is determined, i.e., the ultrasonic power value is 90 mW, the ultrasonic time is 20 ms, and the bonding pressure is 40 gf, which improves the reliability of the wire bonding process.

Details

Title
Optimization of 25 µm gold wire lead bonding process parameters based on orthogonal test
Author
Feng, Dongdong 1 ; Wang, Wei 2 ; Guan, Yimin 3 

 Department of Microelectronics, Shanghai University , Shanghai 200000 , China 
 Shanghai Aure Technology Limited Company , Shanghai 200000 , China 
 Department of Microelectronics, Shanghai University , Shanghai 200000 , China; Shanghai Industrial µTechnology Research Institute , Shanghai 200000 , China; Shanghai Aure Technology Limited Company , Shanghai 200000 , China 
First page
012032
Publication year
2023
Publication date
Jun 2023
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2828409625
Copyright
Published under licence by IOP Publishing Ltd. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.