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© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

The era of 20 nm integrated circuits has arrived. There exist abundant heterogeneous micro/nano structures, with thicknesses ranging from hundreds of nanometers to sub-microns in the IC back end of the line stack, which put stringent demands on the reliability of the device. In this paper, the reliability issues of a 20 nm chip due to chip–package interaction during the reflow process is studied. A representative volume element of the detailed complex BEoL structure has been analyzed to obtain mechanical properties of the BEoL stack by adopting a sub-model analysis. For the first time, semi-elliptical cracks were used in conjunction with J-integral techniques to analyze the failure caused by Chip-to-Package Interaction for a 20 nm chip. The Energy Release Rate(ERR)for cracks at various interfaces and locations in the BEoL stack were calculated to predict the most likely mode and location of failure. We found that the ERR of interfacial cracks at the bottom surface of the interconnects are, on average, more than double those at the sidewalls, which are in turn more than double the number of cracks in the low-k inter-layer dielectric. A total of 500 cycles of thermal shock were conducted, which verified the predictions of the finite element simulations.

Details

Title
An Investigation on the Most Likely Failure Locations in the BEoL Stack of a 20 nm Chip Due to Chip Package Interaction with the Use of Novel Semi-Elliptical Cracks
Author
Li, Ganglong 1 ; Shi, Yidian 2 ; Tay, Andrew A O 3 ; Long, Zhilin 4 

 School of Civil Engineering and Mechanics, Xiangtan University, Xiangtan 411105, China; School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China 
 School of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China; [email protected] 
 Division of Engineering Product Development, Singapore University of Technology and Design, Singapore 487372, Singapore 
 School of Civil Engineering and Mechanics, Xiangtan University, Xiangtan 411105, China 
First page
1953
Publication year
2023
Publication date
2023
Publisher
MDPI AG
e-ISSN
2072666X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2882812843
Copyright
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.