It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Highlights
Recent progress in noble metal-decorated (NM-D) semiconducting metal oxides (SMOs) gas sensors are summarized.
Gas sensing mechanisms related to noble metal decoration are carefully discussed.
Crucial challenges facing the development of NM-D SMOs gas sensors are analyzed.
Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring, exhaled breath diagnosis, and food freshness analysis. Among various chemiresistive sensing materials, noble metal-decorated semiconducting metal oxides (SMOs) have currently aroused extensive attention by virtue of the unique electronic and catalytic properties of noble metals. This review highlights the research progress on the designs and applications of different noble metal-decorated SMOs with diverse nanostructures (e.g., nanoparticles, nanowires, nanorods, nanosheets, nanoflowers, and microspheres) for high-performance gas sensors with higher response, faster response/recovery speed, lower operating temperature, and ultra-low detection limits. The key topics include Pt, Pd, Au, other noble metals (e.g., Ag, Ru, and Rh.), and bimetals-decorated SMOs containing ZnO, SnO2, WO3, other SMOs (e.g., In2O3, Fe2O3, and CuO), and heterostructured SMOs. In addition to conventional devices, the innovative applications like photo-assisted room temperature gas sensors and mechanically flexible smart wearable devices are also discussed. Moreover, the relevant mechanisms for the sensing performance improvement caused by noble metal decoration, including the electronic sensitization effect and the chemical sensitization effect, have also been summarized in detail. Finally, major challenges and future perspectives towards noble metal-decorated SMOs-based chemiresistive gas sensors are proposed.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Fudan University, State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Shanghai, People’s Republic of China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
2 University of Shanghai for Science and Technology, School of Opto-Electronic Information and Computer Engineering, Shanghai, People’s Republic of China (GRID:grid.267139.8) (ISNI:0000 0000 9188 055X)
3 Shanghai Jiao Tong University, State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai, People’s Republic of China (GRID:grid.16821.3c) (ISNI:0000 0004 0368 8293)