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© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

Amorphous germanium films on nonrefractory glass substrates were annealed by ultrashort near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses. Crystallization of germanium irradiated at a laser energy density (fluence) range from 25 to 400 mJ/cm2 under single-shot and multishot conditions was investigated using Raman spectroscopy. The dependence of the fraction of the crystalline phase on the fluence was obtained for picosecond and femtosecond laser annealing. The regimes of almost complete crystallization of germanium films over the entire thickness were obtained (from the analysis of Raman spectra with excitation of 785 nm laser). The possibility of scanning laser processing is shown, which can be used to create films of micro- and nanocrystalline germanium on flexible substrates.

Details

Title
Ultrafast Infrared Laser Crystallization of Amorphous Ge Films on Glass Substrates
Author
Cheng, Yuzhu 1   VIAFID ORCID Logo  ; Bulgakov, Alexander V 2   VIAFID ORCID Logo  ; Bulgakova, Nadezhda M 2   VIAFID ORCID Logo  ; Beránek, Jiří 3 ; Zukerstein, Martin 2   VIAFID ORCID Logo  ; Milekhin, Ilya A 4 ; Popov, Alexander A 5 ; Volodin, Vladimir A 4   VIAFID ORCID Logo 

 Physics Department, Novosibirsk State University, Pirogova Street, 2, Novosibirsk 630090, Russia; [email protected] (Y.C.); [email protected] (I.A.M.) 
 HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic; [email protected] (A.V.B.); [email protected] (N.M.B.); [email protected] (J.B.); [email protected] (M.Z.) 
 HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic; [email protected] (A.V.B.); [email protected] (N.M.B.); [email protected] (J.B.); [email protected] (M.Z.); Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, 12001 Prague, Czech Republic 
 Physics Department, Novosibirsk State University, Pirogova Street, 2, Novosibirsk 630090, Russia; [email protected] (Y.C.); [email protected] (I.A.M.); Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Lavrentiev Ave, 13, Novosibirsk 630090, Russia 
 Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Yaroslavl 150007, Russia; [email protected] 
First page
2048
Publication year
2023
Publication date
2023
Publisher
MDPI AG
e-ISSN
2072666X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2893169268
Copyright
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.