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© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

In the domain of automatic visual inspection for miniature capacitor quality control, the task of accurately detecting defects presents a formidable challenge. This challenge stems primarily from the small size and limited sample availability of defective micro-capacitors, which leads to issues such as reduced detection accuracy and increased false-negative rates in existing inspection methods. To address these challenges, this paper proposes an innovative approach employing an enhanced ‘you only look once’ version 8 (YOLOv8) architecture specifically tailored for the intricate task of micro-capacitor defect inspection. The merging of the bidirectional feature pyramid network (BiFPN) architecture and the simplified attention module (SimAM), which greatly improves the model’s capacity to recognize fine features and feature representation, is at the heart of this methodology. Furthermore, the model’s capacity for generalization was significantly improved by the addition of the weighted intersection over union (WISE-IOU) loss function. A micro-capacitor surface defect (MCSD) dataset comprising 1358 images representing four distinct types of micro-capacitor defects was constructed. The experimental results showed that our approach achieved 95.8% effectiveness in the mean average precision (mAP) at a threshold of 0.5. This indicates a notable 9.5% enhancement over the original YOLOv8 architecture and underscores the effectiveness of our approach in the automatic visual inspection of miniature capacitors.

Details

Title
Enhanced YOLOv8 with BiFPN-SimAM for Precise Defect Detection in Miniature Capacitors
Author
Li, Ning 1 ; Ye, Tianrun 2 ; Zhou, Zhihua 3 ; Gao, Chunming 4 ; Zhang, Ping 4 

 School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China; [email protected] (N.L.); [email protected] (Z.Z.) 
 Yibin Park of University of Electronic Science and Technology of China, Yibin 644000, China; [email protected] 
 School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China; [email protected] (N.L.); [email protected] (Z.Z.); Yibin Park of University of Electronic Science and Technology of China, Yibin 644000, China; [email protected] 
 School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China; [email protected] (N.L.); [email protected] (Z.Z.); Yibin Park of University of Electronic Science and Technology of China, Yibin 644000, China; [email protected]; Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518000, China 
First page
429
Publication year
2024
Publication date
2024
Publisher
MDPI AG
e-ISSN
20763417
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2912564720
Copyright
© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.