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Abstract

A floating/grounded memristor emulator having a single MOSFET connected to a first-order RC filter with high operating frequency is presented. The proposed memristor emulator is passive in nature and provides zero static power, and a few pW of dynamic power when input signal is applied. The emulator has been simulated using Cadence Virtuoso Spectre tool. The mathematical analysis substantiates the existence of the proposed memristor emulator and its incremental nature. With a layout area of 1.586 μm2, the memristor emulator operates up to 80 MHz. The main contribution is the experimental verification of the proposed topology using discrete transistor, ALD1117 Dual P-channel enhancement MOSFET array and discrete elements in the form of an R–C tank circuit. The performance characteristics for its analog and digital applications have been simulated and verified in grounded as well as floating mode. The emulator circuit offers a simplified design and low power consumption compared to other existing memristor emulators.

Details

Title
A Single MOS-Memristor Emulator Circuit
Author
Gupta, Rahul Kumar 1   VIAFID ORCID Logo  ; Choudhry, Mahipal Singh 2 ; Saxena, Varun 3 ; Taran, Sachin 2 

 Delhi Technological University, Electronics and Communication Engineering, New Delhi, India (GRID:grid.440678.9) (ISNI:0000 0001 0674 5044); JSS Academy of Technical Education, Electronics and Communication Engineering, Noida, India (GRID:grid.418403.a) (ISNI:0000 0001 0733 9339) 
 Delhi Technological University, Electronics and Communication Engineering, New Delhi, India (GRID:grid.440678.9) (ISNI:0000 0001 0674 5044) 
 Jawaharlal Nehru University, School of Engineering, New Delhi, India (GRID:grid.10706.30) (ISNI:0000 0004 0498 924X) 
Pages
54-73
Publication year
2024
Publication date
Jan 2024
Publisher
Springer Nature B.V.
ISSN
0278081X
e-ISSN
15315878
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2913264278
Copyright
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.