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Abstract
Highlights
A transparent, conductive, and flexible metal mesh film has been developed by a low-cost, uniform self-forming crackle template and electroplating strategy.
The Cu mesh films show an ultra-low sheet resistance (0.18 Ω □−1), high transmittance (85.8%@550 nm), high figure of merit (> 13,000), excellent stretchability and mechanical stability.
The metal mesh film can be used as a flexible heater and electromagnetic interference shielding film (40.4 dB at 2.5 μm).
Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference (EMI) shielding, achieving a flexible EMI shielding film, while maintaining a high transmittance remains a significant challenge. Herein, a flexible, transparent, and conductive copper (Cu) metal mesh film for EMI shielding is fabricated by self-forming crackle template method and electroplating technique. The Cu mesh film shows an ultra-low sheet resistance (0.18 Ω □−1), high transmittance (85.8%@550 nm), and ultra-high figure of merit (> 13,000). It also has satisfactory stretchability and mechanical stability, with a resistance increases of only 1.3% after 1,000 bending cycles. As a stretchable heater (ε > 30%), the saturation temperature of the film can reach over 110 °C within 60 s at 1.00 V applied voltage. Moreover, the metal mesh film exhibits outstanding average EMI shielding effectiveness of 40.4 dB in the X-band at the thickness of 2.5 μm. As a demonstration, it is used as a transparent window for shielding the wireless communication electromagnetic waves. Therefore, the flexible and transparent conductive Cu mesh film proposed in this work provides a promising candidate for the next-generation EMI shielding applications.
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Details
1 Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Guangzhou, People’s Republic of China (GRID:grid.12981.33) (ISNI:0000 0001 2360 039X)
2 Chinese Academy of Sciences, Guangdong Provincial Key Laboratory of Materials for High Density Electronic Packing, Shenzhen Institutes of Advanced Technology, Shenzhen, People’s Republic of China (GRID:grid.9227.e) (ISNI:0000000119573309)
3 Sun Yat-Sen University, School of Materials Science and Engineering, Guangzhou, People’s Republic of China (GRID:grid.12981.33) (ISNI:0000 0001 2360 039X)