Abstract

A nonlinear system, exhibiting a unique asymptotic behaviour, while being continuously subject to a stimulus from a certain class, is said to suffer from fading memory. This interesting phenomenon was first uncovered in a non-volatile tantalum oxide-based memristor from Hewlett Packard Labs back in 2016 out of a deep numerical investigation of a predictive mathematical description, known as the Strachan model, later corroborated by experimental validation. It was then found out that fading memory is ubiquitous in non-volatile resistance switching memories. A nonlinear system may however also exhibit a local form of fading memory, in case, under an excitation from a given family, it may approach one of a number of distinct attractors, depending upon the initial condition. A recent bifurcation study of the Strachan model revealed how, under specific train stimuli, composed of two square pulses of opposite polarity per cycle, the simplest form of local fading memory affects the transient dynamics of the aforementioned Resistive Random Access Memory cell, which, would asymptotically act as a bistable oscillator. In this manuscript we propose an analytical methodology, based on the application of analysis tools from Nonlinear System Theory to the Strachan model, to craft the properties of a generalised pulse train stimulus in such a way to induce the emergence of complex local fading memory effects in the nano-device, which would consequently display an interesting tuneable multistable oscillatory response, around desired resistance states. The last part of the manuscript discusses a case study, shedding light on a potential application of the local history erase effects, induced in the device via pulse train stimulation, for compensating the unwanted yet unavoidable drifts in its resistance state under power off conditions.

Details

Title
An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM
Author
Ascoli, Alon 1   VIAFID ORCID Logo  ; Schmitt, Nicolas 2 ; Messaris, Ioannis 2 ; Demirkol, Ahmet Samil 2 ; Strachan, John Paul 3 ; Tetzlaff, Ronald 2 ; Chua, Leon 4 

 Department of Electronics and Telecommunications, Politecnico di Torino, Turin, Italy (GRID:grid.4800.c) (ISNI:0000 0004 1937 0343); Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Institute of Circuits and Systems, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257) 
 Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Institute of Circuits and Systems, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257) 
 Forschungszentrum Jülich GmbH, Peter Grünberg Institute, Jülich, Germany (GRID:grid.8385.6) (ISNI:0000 0001 2297 375X); RWTH Aachen University, Aachen, Germany (GRID:grid.1957.a) (ISNI:0000 0001 0728 696X) 
 Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, USA (GRID:grid.47840.3f) (ISNI:0000 0001 2181 7878) 
Pages
5626
Publication year
2024
Publication date
2024
Publisher
Nature Publishing Group
e-ISSN
20452322
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2941976877
Copyright
© The Author(s) 2024. corrected publication 2024. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.