Content area
Abstract
In this thesis, we studied the effects of disorder on the integer quantized Hall effect within the screening theory, systematically. The disorder potential is analyzed considering the range of the potential fluctuations. Short range part of the single impurity potential is used to define the conductivity tensor elements within the selfconsistent Born approximation, whereas the long range part is treated self-consistently at the Hartree level. Briefly, we discussed the extend of the quantized widths Hall plateaus considering the mobilityof the wafer and the width of the sample, by reformulating the Ohms law at low temperatures and high magnetic fields.
In the second part of the thesis, discusses a systematic explanation to the unusual non-monotonic behavior of the Hall resistance observed in two-dimensional electron systems. In the calculations used a semi analytical model based on the interaction theory of the integer quantized Hall effect to investigate the existence of the anomalous, i.e. overshoot, Hall resistance. The observation of the overshoot resistance at low magnetic-field edge of the plateaus is elucidated by means of overlapping evanescent incompressible strips, formed due to strong magnetic fields and interactions. The effects of the sample width, depletion length, disorder strength and magnetic field on the overshoot peaks are investigated in detail.