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Abstract
Understanding the sensing mechanism of metal oxide semiconductors is imperative to the development of high-performance sensors. The traditional sensing mechanism only recognizes the effect of surface chemisorbed oxygen from the air but ignores surface lattice oxygen. Herein, using in-situ characterizations, we provide direct experimental evidence that the surface chemisorbed oxygen participated in the sensing process can come from lattice oxygen of the oxides. Further density functional theory (DFT) calculations prove that the p-band center of O serves as a state of art for regulating the participation of lattice oxygen in gas-sensing reactions. Based on our experimental data and theoretical calculations, we discuss mechanisms that are fundamentally different from the conventional mechanism and show that the easily participation of lattice oxygen is helpful for the high response value of the materials.
Understanding the sensing mechanism of metal oxide semiconductors is imperative for developing high-performance sensors. Here, the participation of lattice oxygen, caused by additional Ge, boosts the hydrogen sensing ability of SnO2.
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1 Jilin University, State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Changchun, P. R. China (GRID:grid.64924.3d) (ISNI:0000 0004 1760 5735)
2 Tsinghua University, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment, Beijing, P. R. China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)
3 NingboTech University, School of Biological and Chemical Engineering, Ningbo, P. R. China (GRID:grid.513221.6)
4 Third Military Medical University (Army Medical University), Department of Chemistry, College of Basic Medicine, Chongqing, P. R. China (GRID:grid.410570.7) (ISNI:0000 0004 1760 6682)
5 Jiangsu University of Science and Technology, School of Metallurgy Engineering, Zhangjiagang, P. R. China (GRID:grid.510447.3) (ISNI:0000 0000 9970 6820)