Abstract

Recently, there has been an increase in the use of antimony sulfide (Sb2S3) in Si-based tandem solar cells as a potential absorber material for top sub-cells. The choice of the material stems from the favoured properties such as appropriate bandgap, simple binary composition, nontoxic elements, and long-term stability. However, the physical properties and practical applicability of these materials depend largely on their synthesis conditions. In this work, we investigate the role of sulfurization on the structural, morphological, compositional, and optical properties of Sb2S3 thin films deposited on soda-lime glass via a thermal evaporation technique. Sulfurization was performed on the as-prepared thin films in a customized Chemical Vapor Deposition (CVD) chamber at five different temperatures. Analysis of the crystallinity of the film using the x-ray diffraction technique illustrates the transformation of the film from impure, poor crystalline phase to phase-pure, and highly crystalline orthorhombic structure due to sulfurization. Scanning electron microscopic investigations of the samples revealed better grains with nanorods on the surface at a temperature of 400 °C. For the samples investigated here, the energy values estimated via density functional theory (DFT) calculations agreed well with the experimental data obtained from UV-visible absorption spectral studies. Additionally, it was observed that the desired near-stoichiometric Sb2S3 thin films could be achieved via sulfurization, and the presence of Sb2S3 in all samples was confirmed via Raman spectroscopic studies. Additionally, the defects and trap states of the prepared films were investigated using photoluminescence studies, and donor and acceptor defects were identified. Our study revealed that sulfur rich Sb2S3 films prepared at a sulfurization temperature of 400 °C produced the desired structure, morphology, and optical qualities for future photovoltaic applications.

Details

Title
Two-step synthesis of antimony sulfide thin films: enhancement in physical properties through sulfurization
Author
Kavya, D M 1 ; Prabhu, B Jyeshta 1   VIAFID ORCID Logo  ; Choudhari, Nagabhushan Jnaneshwar 1 ; Mariot, Jose Panjikaran 1 ; George, Sajan D 2   VIAFID ORCID Logo  ; Kulkarni, Suresh D 3   VIAFID ORCID Logo  ; Mishra, Vikash 1 ; Raviprakash, Y 1   VIAFID ORCID Logo 

 Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education , Manipal-576104, India 
 Centre for Applied Nanosciences, Department of Atomic and Molecular Physics, Manipal Academy of Higher Education , Manipal-576104, Karnataka, India 
 Department of Atomic and Molecular Physics, Manipal Academy of Higher Education , Manipal-576104, Karnataka, India 
First page
046402
Publication year
2024
Publication date
Apr 2024
Publisher
IOP Publishing
e-ISSN
20531591
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
3036850159
Copyright
© 2024 The Author(s). Published by IOP Publishing Ltd. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.