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Abstract
This work compares the physical properties of boron carbides, B$\sb5$C in particular, fabricated by plasma enhanced chemical vapor deposition (PECVD) and r.f. magnetron sputtering techniques. In the former technique, icosahedral closo-1, 2-dicarbadodecarborane $\rm (C\sb2B\sb{10}H\sb{12}$; orthocarborane) was used as a single source compound to fabricate the boron carbide films. In the latter technique, a pure and dense boron target, flushed with Argon/Methane glow discharge prior to the sputtering process was used to deposit boron carbides. Although sputtering boron from a boron target and boron carbide from a boron carbide target (of the same stoichiometry) are well known methods, this sputtering methodology is considered to be unique. The optical properties, microstructure and surface morphology of the films were investigated by UV, visible and near infrared probing techniques. Other properties due to carrier traps inside the band gaps were investigated by Raman scattering and FTIR spectroscopic ellipsometry. Electrical properties such as heterojunction diodes characteristics, and film resistivity of the materials were investigated as well.
