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Abstract
Axion insulators possess a quantized axion field θ = π protected by combined lattice and time-reversal symmetry, holding great potential for device applications in layertronics and quantum computing. Here, we propose a high-spin axion insulator (HSAI) defined in large spin-s representation, which maintains the same inherent symmetry but possesses a notable axion field θ = (s + 1/2)2π. Such distinct axion field is confirmed independently by the direct calculation of the axion term using hybrid Wannier functions, layer-resolved Chern numbers, as well as the topological magneto-electric effect. We show that the guaranteed gapless quasi-particle excitation is absent at the boundary of the HSAI despite its integer surface Chern number, hinting an unusual quantum anomaly violating the conventional bulk-boundary correspondence. Furthermore, we ascertain that the axion field θ can be precisely tuned through an external magnetic field, enabling the manipulation of bonded transport properties. The HSAI proposed here can be experimentally verified in ultra-cold atoms by the quantized non-reciprocal conductance or topological magnetoelectric response. Our work enriches the understanding of axion insulators in condensed matter physics, paving the way for future device applications.
Existing proposals of axion insulators are limited to spin-1/2 systems. Here the authors put forward a concept of a high spin axion insulator with several peculiar properties, such as the absence of gapless surface states and tunability of the axion field by an external magnetic field.
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1 Soochow University, School of Physical Science and Technology, Suzhou, China (GRID:grid.445078.a) (ISNI:0000 0001 2290 4690); Soochow University, Institute for Advanced Study, Suzhou, China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694)
2 Peking University, International Center for Quantum Materials, School of Physics, Beijing, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319)
3 Nankai University, School of Physics, Tianjin, China (GRID:grid.216938.7) (ISNI:0000 0000 9878 7032)
4 Soochow University, Institute for Advanced Study, Suzhou, China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694); Fudan University, Institute for Nanoelectronic Devices and Quantum Computing, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Fudan University, Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
5 Peking University, International Center for Quantum Materials, School of Physics, Beijing, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319); Fudan University, Institute for Nanoelectronic Devices and Quantum Computing, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Fudan University, Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Hefei National Laboratory, Hefei, China (GRID:grid.59053.3a) (ISNI:0000000121679639)