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Title
Author Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors
Author
Sui, Fengrui 1
; Li, Haoyang 1 ; Qi, Ruijuan 2
; Jin, Min 3 ; Lv, Zhiwei 1 ; Wu, Menghao 4 ; Liu, Xuechao 5 ; Zheng, Yufan 1 ; Liu, Beituo 1 ; Ge, Rui 1
; Wu, Yu-Ning 1
; Huang, Rong 1
; Yue, Fangyu 6
; Chu, Junhao 7 ; Duan, Chungang 6
1 East China Normal University, Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365)
2 East China Normal University, Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365); Chinese Academy of Sciences, National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309)
3 Shanghai Dianji University, College of Materials, Shanghai, China (GRID:grid.454823.c) (ISNI:0000 0004 1755 0762)
4 Huazhong University of Science and Technology, School of Physics, Wuhan, China (GRID:grid.33199.31) (ISNI:0000 0004 0368 7223)
5 Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309)
6 East China Normal University, Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365); Shanxi University, Collaborative Innovation Center of Extreme Optics, Taiyuan, China (GRID:grid.163032.5) (ISNI:0000 0004 1760 2008); East China Normal University, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365)
7 East China Normal University, Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365); Shanghai Institute of Technical Physics, National Laboratory of Infrared Physics, Shanghai, China (GRID:grid.458467.c) (ISNI:0000 0004 0632 3927)






1 East China Normal University, Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365)
2 East China Normal University, Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365); Chinese Academy of Sciences, National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309)
3 Shanghai Dianji University, College of Materials, Shanghai, China (GRID:grid.454823.c) (ISNI:0000 0004 1755 0762)
4 Huazhong University of Science and Technology, School of Physics, Wuhan, China (GRID:grid.33199.31) (ISNI:0000 0004 0368 7223)
5 Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309)
6 East China Normal University, Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365); Shanxi University, Collaborative Innovation Center of Extreme Optics, Taiyuan, China (GRID:grid.163032.5) (ISNI:0000 0004 1760 2008); East China Normal University, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365)
7 East China Normal University, Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365); Shanghai Institute of Technical Physics, National Laboratory of Infrared Physics, Shanghai, China (GRID:grid.458467.c) (ISNI:0000 0004 0632 3927)
Pages
4396
Publication year
2024
Publication date
2024
e-ISSN
20411723
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
3059116954
Copyright
© The Author(s) 2024. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.