Gate Dielectric Engineering on 2D FETs for Continued Scaling

Abstract

In the last few years, a significant interest has been shown in 2D field effect transistors (2D FETs) as an appropriate candidate for advanced electronics devices. This study presents a comprehensive performance analysis of 2D FETs with channels consisting of MOS₂, MOSe₂ and MoTe₂ using various dielectric materials, focusing on their application in low-power electronic devices. Materials such as molybdenum disulfide (MOS₂), molybdenum Di selenide (MoSe₂), molybdenum ditelluride (MoTe₂) belong to the transition metal dichalcogenide (TMD) family, which are known for their fascinating electronic properties. This study addresses the performance evaluation of 2D field effect transistors (FETs) while emphasizing low power consumption. The research examines three critical design parameters - channel lengths, channel materials and dielectrics and examines their influence on FET performance. The miniaturization of transistor technology, critical to compact and power-efficient devices, is analyzed, highlighting the effects of shorter channels on static power, subthreshold swing, and on-off current ratio. In addition, the study examines the role of channel materials and contrasts traditional silicon with new two-dimensional materials such as graphene. Insights are provided into optimizing nanosheet FETs for power-efficient electronic applications and mastering the delicate balance between advantages and limitations in design decisions.