It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
An infrared (IR) absorber is a crucial component for thermal detectors, requiring high absorptance over a broad wavelength range while maintaining low heat capacity for optimal performance. Most thermal detectors use a thin film IR absorber that is suspended in air, supported by a layer beneath it for mechanical stability. However, this support layer increases heat capacity without contributing to IR absorptance, thereby reducing the performance of thermal detectors. In this paper, we introduce a polarization-independent nanowire array absorber using flanged nanowires with a C-shaped cross-section. This C-shaped design provides mechanical stability, eliminating the need for a support layer. Although nanowire array is generally known to exhibit polarization characteristics, the unique structure of the proposed flanged nanowires enables them to achieve polarization-independent properties, resulting in high absorptance similar to that of film absorbers. We theoretically analyzed the polarization-independent characteristics of the flanged nanowires using an optical circuit model and optimized the flanged nanowire structure using finite-difference time-domain (FDTD) simulations. Finally, we experimentally demonstrated the polarization-independent characteristics of the flanged nanowires and confirmed their high absorptance comparable to that of film absorbers.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, Republic of Korea (GRID:grid.37172.30) (ISNI:0000 0001 2292 0500)
2 Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, Republic of Korea (GRID:grid.37172.30) (ISNI:0000 0001 2292 0500); Northwestern University, Center for Bio-Integrated Electronics, Evanston, USA (GRID:grid.16753.36) (ISNI:0000 0001 2299 3507)