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Abstract
Eco-friendly Sn-based perovskites show significant potential for high-performance second near-infrared window light-emitting diodes (900 nm – 1700 nm). Nevertheless, achieving efficient and stable Sn-based perovskite second near-infrared window light-emitting diodes remains challenging due to the propensity of Sn2+ to oxidize, resulting in detrimental Sn4+-induced defects and compromised device performance. Here, we present a targeted strategy to eliminate Sn4+-induced defects through moisture-triggered hydrolysis of tin tetrahalide, without degrading Sn2+ in the CsSnI3 film. During the moisture treatment, tin tetrahalide is selectively hydrolyzed to Sn(OH)4, which provides sustained protection. As a result, we successfully fabricate second near-infrared window light-emitting diodes emitting at 945 nm, achieving a performance breakthrough with an external quantum efficiency of 7.6% and an operational lifetime reaching 82.6 h.
Guan et al. report a strategy of moisture-triggered selective hydrolysis of Sn4+ into Sn(OH)4, eliminating Sn4 + -induced defects in tin-based perovskites and enhancing the electron injection in NIR-II LED devices with peak emission of 945 nm and external quantum efficiency of 7.6%.
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1 Fudan University, Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Huaqiao University, Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Xiamen, China (GRID:grid.411404.4) (ISNI:0000 0000 8895 903X)
2 Huaqiao University, Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Xiamen, China (GRID:grid.411404.4) (ISNI:0000 0000 8895 903X)
3 Fudan University, Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
4 Huaqiao University, Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Xiamen, China (GRID:grid.411404.4) (ISNI:0000 0000 8895 903X); Division of Physical Science and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia (GRID:grid.45672.32) (ISNI:0000 0001 1926 5090)