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In the presented work, erbium fiber lasers operating in the pulsed mode with a nonlinear element containing a vanadium oxide saturable absorber are demonstrated. The structure of the saturable absorber is based on a segment of thinned silica fiber coated with a thin-film vanadium oxide by the method of metalorganic chemical vapor deposition. A fiber laser scheme is demonstrated that allows controlling the transmission of the internal cavity of the resonator during laser generation and deposition of a thin film. We have demonstrated a method for obtaining and annealing nanocoatings with laser generation control. We controlled the laser output parameters directly during the synthesis of the saturable absorber material. Vanadium oxides obtained in the work demonstrated the Mott–Paierls phase transition practically at room temperature. In this work, the optical characteristics of the output radiation of a fiber laser with a saturable absorber were measured. At temperatures above 70 °C, the coatings demonstrate a passive Q-switch with a repetition rate of 38 kHz and a pulse duration of 3.8 μs. At temperatures below the phase transition, a short-term mode-locking mode occurs. The transmission jump at a wavelength of about 1350 nm during structural rearrangement was 24%. For comparison, VO2 nanopowder in a polydimethylsiloxane elastomer matrix was used as a saturable absorber material. The nanopowder modulator made it possible to obtain pulses with a frequency of 27 kHz and a duration of about 7.2 μs.
Details
Cavity resonators;
Laser outputs;
Organic chemicals;
Vanadium dioxide;
Vanadium;
Vanadium oxides;
Polydimethylsiloxane;
Metalorganic chemical vapor deposition;
Room temperature;
Phase transitions;
Erbium;
Laser radiation;
Mode locking;
Thin films;
Radiation;
Silica;
Optical properties;
Lasers;
Temperature;
Etching;
Fiber lasers;
Elastomers;
Absorbers (materials)
; Kuznetsov, Petr I 2 1 World-Class Research Center, Peter the Great St. Petersburg Polytechnical University, Polytechnicheskaya ul. 29, 195251 St. Petersburg, Russia; Kotel’nikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, Sq. Vvedenskogo 1, Fryazino, 141190 Moscow, Russia;
2 Kotel’nikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, Sq. Vvedenskogo 1, Fryazino, 141190 Moscow, Russia;