Analysis of Edge Termination Techniques for Gallium Nitride Pseudo-Vertical p-n Diodes: Modeling Based on Technology Computer-Aided Design and Review of Current Developments

Abstract

Edge termination techniques play a crucial role in enhancing the breakdown voltage (BV) and managing electric field distribution in GaN-based power devices. This review explores six key termination methods—field plate (FP), mesa, bevel, trench, ion implantation, and guard ring (GR)—with a focus on their performance, fabrication complexity, and insights derived from TCAD simulations. FP and trench terminations excel in high-voltage applications due to their superior electric field control but are accompanied by significant fabrication challenges. Mesa and bevel terminations, while simpler and cost-effective, are more suited for medium-voltage applications. Ion implantation and GR techniques strike a balance, offering customizable parameters for improved BV performance. TCAD simulations provide a robust framework for analyzing these techniques, highlighting optimal configurations and performance trade-offs. The choice of edge termination depends on the specific application, balancing BV requirements with manufacturing feasibility. This review offers a comprehensive comparison, emphasizing the critical role of simulations in guiding the selection and design of edge termination techniques for GaN power devices.