Content area
Abstract
Acquiring the optimum growth conditions of Ti-Al-N films, the effects of gas atmosphere, especially the reactive plasma on the material microstructures, and mechanical properties are still a fundamental and important issue. In this study, Ti-Al-N films are reactively deposited by radio frequency inductively coupled plasma ion source (RF-ICPIS) enhanced sputtering system. Different nitrogen gas flow rates in letting into the ion source are adopted to obtain nitrogen plasma densities and alter deposition atmosphere. It is found the nitrogen element contents in the films are quite influenced by the nitrogen plasma density, and the maximum value can reach as high as 67.8% at high gas flow circumstance. XRD spectra and FESEM images indicate that low plasma density is benefit for the film crystallization and dense microstructure. Moreover, the mechanical properties like hardness and tribological performance are mutually enhanced by adjusting the nitrogen atmosphere.