Compliance-Free ZrO2/ZrO2 − x/ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

Abstract

A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO₂/ZrO_2 − x/ZrO₂ tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO_2 − x layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retracting of oxygen ions. The switching is compliance-free due to the intrinsic series resistor by the filaments formed in the ZrO₂ layers. By tuning the RESET voltages, controllable and stable multistate memory can be achieved which clearly points towards the capability of developing the next-generation multistate high-performance memory.