Content area

Abstract

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.

Details

Title
Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
Pages
56
Publication year
2017
Publication date
Dec 2017
Publisher
Springer Nature B.V.
ISSN
19317573
e-ISSN
1556276X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
3196723218
Copyright
Copyright Springer Nature B.V. Dec 2017