Formation of Nb2O5 matrix and Vis-NIR absorption in Nb-Ge-O thin film

Abstract

This paper investigates the crystal structure and optical absorption of Ge-doped Nb-oxide (Nb-Ge-O) thin films prepared by RF sputtering. A wide-gap material, Nb₂O₅, is selectively produced as a matrix to disperse Ge nanocrystals through compositional optimization with Ge chip numbers and oxygen ratio in argon. The optical-absorption spectra are obviously shifted to visible (vis) and near-infrared (NIR) regions, suggesting that a composite thin film with Ge nanocrystals dispersed in Nb₂O₅ matrix exhibits quantum-size effects. Accordingly, the two valuable characteristics of the Nb₂O₅ matrix and the vis-NIR absorption are found to be retained simultaneously in Nb-Ge-O thin films.