Content area

Abstract

With the rapid development of big data and artificial intelligence, the demand for memory has exploded. As a key data structure in modern databases and distributed storage systems, the Log-Structured Merge Tree (LSM-tree) has been widely employed (such as LevelDB, RocksDB, etc.) in systems based on key–value pairs due to its efficient writing performance. In LSM-tree-based KV stores, typically deployed on systems with DRAM-SSD storage, the KV items are first organized into MemTable as buffer for SSTables in main memory. When the buffer size exceeds the threshold, MemTable is flushed to the SSD and reorganized into an SSTable, which is then passed down level by level through compaction. However, the compaction degrades write performance and SSD endurance due to significant write amplification. To address this issue, recent proposals have mostly focused on redesigning the structure of LSM trees. We discover the prevalence of unchanged data blocks (UDBs) in the LSM-tree compaction process, i.e., UDBs are written back to SSD the same as they are read into memory, which induces extra write amplification and degrades I/O performance. In this paper, we propose a KV store design in SSD, called RemapCom, to exploit remapping on these UDBs. RemapCom first identifies UDBs with a lightweight state machine integrated into the compaction merge process. In order to increase the ratio of UDBs, RemapCom further designs a UDB retention method to further develop the benefit of remapping. Moreover, we implement a prototype of RemapCom on LevelDB by providing two primitives for the remapping. Compared to the state of the art, the evaluation results demonstrate that RemapCom can reduce write amplification by up to 53% and improve write throughput by up to 30%.

Details

1009240
Identifier / keyword
Title
Compaction-Aware Flash Memory Remapping for Key–Value Stores †
Author
Wang, Jialin 1 ; Yang, Zhen 2 ; Fan, Yi 2 ; Du Yajuan 2 

 College of Electrical Engineering, Naval University of Engineering, Wuhan 430033, China; [email protected] 
 School of Computer Science and Artificial Intelligence, Wuhan University of Technology, Wuhan 430070, China; [email protected] (Z.Y.); [email protected] (Y.F.) 
Publication title
Volume
16
Issue
6
First page
699
Number of pages
23
Publication year
2025
Publication date
2025
Publisher
MDPI AG
Place of publication
Basel
Country of publication
Switzerland
Publication subject
e-ISSN
2072666X
Source type
Scholarly Journal
Language of publication
English
Document type
Journal Article
Publication history
 
 
Online publication date
2025-06-11
Milestone dates
2025-05-19 (Received); 2025-06-09 (Accepted)
Publication history
 
 
   First posting date
11 Jun 2025
ProQuest document ID
3223926724
Document URL
https://www.proquest.com/scholarly-journals/compaction-aware-flash-memory-remapping-key-value/docview/3223926724/se-2?accountid=208611
Copyright
© 2025 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
Last updated
2025-06-25
Database
ProQuest One Academic