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Abstract

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The barrier layer for an Aluminum Gallium Nitride (AlGaN) High Electron Mobility Transistor (HEMT) on silicon is studied. The objective is to optimize the high frequency performance with a practical fabrication process. Devices with standard barrier layers and step-barrier structures are simulated and analysed using Sentaurus Technology Computer Aided Design (TCAD) and correlated with experimental results. An AlGaN HEMT with an optimized step-barrier structure can attain a unity current gain frequency of ft = 52 GHz, a 21% increase when compared to the standard device. Based on trends in the unity current gain frequency, a method for determining the critical thickness of the step-barrier is proposed.

Details

1010268
Subject
Electrical engineering;
Computer engineering;
Computer science
Classification
0544: Electrical engineering
0984: Computer science
0464: Computer Engineering
Identifier / keyword
Aluminum Gallium Nitride; High Electron Mobility Transistor; Technology Computer Aided Design; Gain frequency
Title
A Study on Step-Barrier Structures for Radio Frequency AlGaN High Electron Mobility Transistors
Author
Watson, Carina Lauren
Number of pages
120
Publication year
2025
Degree date
2025
School code
0779
Source
MAI 87/5(E), Masters Abstracts International
ISBN
9798265437938
Advisor
Ng, Wai Tung
Committee member
Dawson, Francis; Ruda, Harry
University/institution
University of Toronto (Canada)
Department
Electrical and Computer Engineering
University location
Canada -- Ontario, CA
Degree
M.A.S.
Source type
Dissertation or Thesis
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
32117021
ProQuest document ID
3276363711
Document URL
https://www.proquest.com/dissertations-theses/study-on-step-barrier-structures-radio-frequency/docview/3276363711/se-2?accountid=208611
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Database
ProQuest One Academic