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In the era of big data, robust data security is more critical than ever. One promising way to create unpredictable random keys is to use the intrinsic physical randomness of electronic devices. However, controlling and reproducing this randomness remains a significant challenge. For the first time, we reveal a parabolic input-output relationship enabled by the band-to-band tunneling (BTBT) mechanism in a positive feedback transistor (PFT). By applying iterative operations, we observe chaotic bifurcation behavior, which allows the stable generation of analog random values across more than 1010 cycles. These random values are then used to encrypt and decrypt images, showcasing how encryption technologies can be implemented with just a single PFT. We also show that the charge-trap flash memory (CTF) array integrated with the PFTs can store encrypted information. This study highlights the potential of PFTs as random key generators and examines the device’s behavior under chaotic conditions. By leveraging the physical characteristics of the device, we provide a secure and reliable method for data encryption.
True random number generators are highly demanded for secured data processing, yet it remains challenging to control and reproduce the randomness. Im et al. generate analog random values using a positive feedback transistor and implement it to encrypt and decrypt images, and store encrypted information.
Details
; Ko, Jonghyun 1 ; Im, Jisung 2
; Hwang, Joon 1
; Koo, Ryun-Han 1
; Park, Sung-Ho 1
; Kim, Jangsaeng 3
; Shin, Wonjun 4
; Woo, Sung Yun 2
; Lee, Jong-Ho 1
1 Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Republic of Korea (ROR: https://ror.org/04h9pn542) (GRID: grid.31501.36) (ISNI: 0000 0004 0470 5905)
2 School of Electronics Engineering, Kyungpook National University, Daegu, Republic of Korea (ROR: https://ror.org/040c17130) (GRID: grid.258803.4) (ISNI: 0000 0001 0661 1556)
3 Department of Electronic Engineering, Sogang University, Seoul, Republic of Korea (ROR: https://ror.org/056tn4839) (GRID: grid.263736.5) (ISNI: 0000 0001 0286 5954); Department of System Semiconductor Engineering, Sogang University, Seoul, Republic of Korea (ROR: https://ror.org/056tn4839) (GRID: grid.263736.5) (ISNI: 0000 0001 0286 5954)
4 Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, Republic of Korea (ROR: https://ror.org/04q78tk20) (GRID: grid.264381.a) (ISNI: 0000 0001 2181 989X)