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Abstract
As a foundational concept in many-body physics, electron–phonon interaction is essential to understanding and manipulating charge and energy flow in various electronic, photonic, and energy conversion devices. While much progress has been made in uncovering how phonons affect electron dynamics, it remains a challenge to directly observe the impact of electrons on phonon transport, especially at environmental temperatures. Here, we probe the effect of charge carriers on phonon heat transport at room temperature, using a modified transient thermal grating technique. By optically exciting electron-hole pairs in a crystalline silicon membrane, we single out the effect of the phonon–carrier interaction. The enhanced phonon scattering by photoexcited free carriers results in a substantial reduction in thermal conductivity on a nanosecond timescale. Our study provides direct experimental evidence of the elusive role of electron–phonon interaction in phonon heat transport, which is important for understanding heat conduction in doped semiconductors. We also highlight the possibility of using light to dynamically control thermal transport via electron–phonon coupling.
To what extent the charge carriers can alter phonon heat conduction at environmental temperatures through electron–phonon interactions is an open question. Here, the authors demonstrate substantial reduction in thermal conductivity at high charge carrier densities due to significant phonon scatterings by electrons.
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1 Massachusetts Institute of Technology, Department of Mechanical Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
2 Massachusetts Institute of Technology, Department of Chemistry, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
3 Massachusetts Institute of Technology, Department of Mechanical Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786); Sun Yat-sen University, School of Physics, Guangzhou, China (GRID:grid.12981.33) (ISNI:0000 0001 2360 039X)
4 Massachusetts Institute of Technology, Department of Mechanical Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786); Peking University, Department of Energy and Resources Engineering, and Beijing Innovation Center for Engineering Science and Advanced Technology, Beijing, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319)