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Abstract
Issue Title: Proceedings of the 12th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP-XII 2007) ; Guest Editors: Ute Zeimer and Jens W. Tomm
The X-ray diffractometric Ω-Scan method needs only one measuring circle to determine the lattice geometry of single crystals. From the angular positions of at least two reflection pairs the orientation in a certain range can be precisely determined. For cubic crystals the lattice parameter related to a reference crystal can be calculated additionally. The method is applied to the adjustment of crystal ingots for the succeeding processing and to the characterization of wafers. By means of an x-y table the distribution of the structural parameters over the wafer surface can be mapped with a lateral resolution of about 1 mm. In a Si^sub 1-x^Ge^sub x^ sample, characteristic concentric distributions have been found with orientation changes up to 3 arc minutes and lattice-parameter differences up to 2.8 × 10^sup -5 ^nm, corresponding to differences of the Ge content up to 1.4 at%.[PUBLICATION ABSTRACT]