Content area
Abstract
The growth of Sb-based crystals (InSb, GaSb etc) was undertaken using resistive heater furnace by vertical directional solidification (VDS) technique. Crystal—melt interface shape during the growth was shown to convert from concave to convex along the crystal axis of the ingots. Many antimonide (Sb) crystals of 8 mm to 18 mm diameter were grown by optimized growth parameters. The forced convection and absence of conducting support to ampoule showed improvement in crystal quality of as grown ingots. Crystals showed preferred orientation and self-seeding. Results on interface shape and crystallinity of ingots were found to be in good agreement with the experiments.
Details
Title
Influence of crystal—melt interface shape on self-seeding and single crystalline quality
Author
Gadkari, D. B. 1 ; Shashidharan, P. 2 ; Lal, K. B. 2 ; Arora, B. M. 3
1 Mithibai College, Department of Physics, Mumbai, India (GRID:grid.44871.3e) (ISNI:0000000106680201)
2 University of Mumbai, Department of Physics, Mumbai, India (GRID:grid.44871.3e) (ISNI:0000000106680201)
3 CMPS & MS, Tata Institute of Fundamental Research, Mumbai, India (GRID:grid.22401.35) (ISNI:0000000405029283)
1 Mithibai College, Department of Physics, Mumbai, India (GRID:grid.44871.3e) (ISNI:0000000106680201)
2 University of Mumbai, Department of Physics, Mumbai, India (GRID:grid.44871.3e) (ISNI:0000000106680201)
3 CMPS & MS, Tata Institute of Fundamental Research, Mumbai, India (GRID:grid.22401.35) (ISNI:0000000405029283)
Pages
475-482
Publication year
2001
Publication date
Oct 2001
ISSN
02504707
e-ISSN
09737669
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
884892047
Copyright
© Indian Academy of Sciences 2001.