Full text

Turn on search term navigation

Copyright © 2012 Phillip M. Wu et al. Phillip M. Wu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Nanowires with magnetic doping centers are an exciting candidate for the study of spin physics and proof-of-principle spintronics devices. The required heavy doping can be expected to have a significant impact on the nanowires' electron transport properties. Here, we use thermopower and conductance measurements for transport characterization of Ga0.95Mn0.05As nanowires over a broad temperature range. We determine the carrier type (holes) and concentration and find a sharp increase of the thermopower below temperatures of 120 K that can be qualitatively described by a hopping conduction model. However, the unusually large thermopower suggests that additional mechanisms must be considered as well.

Details

Title
Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires
Author
Wu, Phillip M; Paschoal, Waldomiro, Jr; Kumar, Sandeep; Borschel, Christian; Ronning, Carsten; Canali, Carlo M; Samuelson, Lars; Pettersson, Håkan; Linke, Heiner
Publication year
2012
Publication date
2012
Publisher
John Wiley & Sons, Inc.
ISSN
16879503
e-ISSN
16879511
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
1273831751
Copyright
Copyright © 2012 Phillip M. Wu et al. Phillip M. Wu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.