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Copyright © 2015 W. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Investigation of Zr-gate diamond field-effect transistor with [subscript]SiNx[/subscript] dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm-2 and 24.4 cm2·V-1·s-1, respectively. The output and transfer properties indicate the preservation of conduction channel because of the [subscript]SiNx[/subscript] dielectric layer, which may be explained by the interface bond of C-N. High voltage up to -200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

Details

Title
Diamond Based Field-Effect Transistors of Zr Gate with SiNx Dielectric Layers
Author
Wang, W; C. Hu; Li, S Y; Li, F N; Liu, Z C; Wang, F; J. Fu; Wang, H X
Publication year
2015
Publication date
2015
Publisher
John Wiley & Sons, Inc.
ISSN
16874110
e-ISSN
16874129
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
1731736539
Copyright
Copyright © 2015 W. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.