Abstract

Experimentally, we found the percentage of low valence cations, the ionization energy of cations in film, and the band gap of substrates to be decisive for the formation of two-dimensional electron gas at the interface of amorphous/crystalline oxide (a-2DEG). Considering these findings, we inferred that the charge transfer from the film to the interface should be the main mechanism of a-2DEG formation. This charge transfer is induced by oxygen defects in film and can be eliminated by the electron-absorbing process of cations in the film. Based on this, we propose a simple dipole model that successfully explains the origin of a-2DEG, our experimental findings, and some important properties of a-2DEG.

Details

Title
Formation of Two-dimensional Electron Gas at Amorphous/Crystalline Oxide Interfaces
Author
Li, ChengJian 1 ; Hong, YanPeng 1 ; Xue, HongXia 1 ; Wang, XinXin 1 ; Li, Yongchun 1 ; Liu, Kejian 1 ; Jiang, Weimin 1 ; Liu, Mingrui 1 ; He, Lin 1 ; Dou, RuiFen 1 ; Xiong, ChangMin 1 ; Nie, JiaCai 1 

 Department of Physics, Beijing Normal University, Beijing, China 
First page
1
Publication year
2018
Publication date
Jan 2018
Publisher
Nature Publishing Group
e-ISSN
20452322
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
1993418419
Copyright
© 2017. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.