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Abstract
Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source. The surface electron concentration of MoS2 is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS2 nanoflakes was observed. The transfer length method suggested the current transport in MoS2 following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.
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1 Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, Taiwan
2 Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan
3 Department of Physics, National Taiwan Normal University, Taipei, Taiwan
4 Department of Physics, National Taiwan University, Taipei, Taiwan
5 Department of Physics, National Taiwan Normal University, Taipei, Taiwan; Department of Physics, National Taiwan University, Taipei, Taiwan
6 National Synchrotron Radiation Research Center, Hsinchu, Taiwan; Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan