Content area

Abstract

Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105 ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.

Details

Title
Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions
Author
Jia, Caihong 1 ; Li, Jiachen 1 ; Yang, Guang 1 ; Chen, Yonghai 2 ; Zhang, Weifeng 1 

1  Henan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan University, Kaifeng, People’s Republic of China 
2  Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People’s Republic of China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, People’s Republic of China 
Pages
1-6
Publication year
2018
Publication date
Apr 2018
Publisher
Springer Nature B.V.
ISSN
19317573
e-ISSN
1556276X
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1186/s11671-018-2513-6
ProQuest document ID
2024737375
Copyright
Nanoscale Research Letters is a copyright of Springer, (2018). All Rights Reserved.