Abstract

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Title
Author Correction: Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co2Fe6B2 Free Layer using a Single SyAF [Co/Pt]n Layer
Author
Jin-Young, Choi 1 ; Dong-gi, Lee 1 ; Jong-Ung Baek 2 ; Park, Jea-Gun 3 

 MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul, Republic of Korea 
 MRAM Center, Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea 
 MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul, Republic of Korea; MRAM Center, Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea 
Pages
1-2
Publication year
2018
Publication date
Apr 2018
Publisher
Nature Publishing Group
e-ISSN
20452322
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2031703976
Copyright
© 2018. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.