Abstract

The structure of the Core Chip for Phased Array T R Modules is presented. Methods for the formation of a phase delay for X phase shifters are considered. An original differential design of SiGe core chip for X-band is presented. The schematic of 5 bits phase shifter and attenuator are designed. It consist of a series number LPF and HPF filters. Gain of phase shifter is 1.5 dB. Attenuator has the adjustment range from 0 to 24dB. Linear output power of the core chip is 5dBm. The total consumed current of the device is 158mA, at 5V power supply.

Details

Title
X-band Core Chip SiGe design for Phased Array T/R Modules
Author
Timoshenkov, Valeri; Efimov, Andrey
Section
Circuits
Publication year
2017
Publication date
2017
Publisher
EDP Sciences
ISSN
22747214
e-ISSN
2261236X
Source type
Conference Paper
Language of publication
English
ProQuest document ID
2039332163
Copyright
© 2017. This work is licensed under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and conditions, you may use this content in accordance with the terms of the License.