Vibrational and electrical properties of Cu2−xTe films: experimental data and first principle calculations

Abstract

Vibrational and electrical properties of sputtered films of the copper telluride system are presented. Despite of its technological importance in photovoltaics, the fundamental properties of copper tellurides are poorly understood. Films were deposited at 200 °C by rf sputtering from targets containing mixtures of copper and tellurium powders at nominal concentrations of Cu_1.25Te, Cu_1.5Te, Cu_1.75Te and Cu₂Te. Remarkably for the copper telluride system, it was possible to obtain single-phase vulcanite (CuTe) from the Cu_1.25Te target. Two-phase mixtures of rickardite (Cu₇Te₅) and weissite (Cu_2−xTe) were achieved for other cases. Raman spectra were obtained using two laser lines: 633 and 488 nm. Density functional theory was employed to calculate the phonon dispersion curves and density of states for vulcanite. The Raman bands were in good correspondence with the calculated frequencies. In general, the Raman spectra consisted of high-intensity totally symmetric modes superimposed on monotonically decaying signals. These were explained in terms of three contributing phenomena: convolution of vibrational normal modes, phonon-coupled charge density fluctuations and time-varying local-field contributions to the electric susceptibility. Studies on the conductivity, mobility and carrier concentration were carried out by the Van der Pauw method. Micro/nano scale surface potential studies were performed through Kelvin probe force microscopy mapping.