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Received April 09, 2017 Accepted March 15, 2018
ABSTRACT: This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is quick detection since the evaluation is done while the SiC Mosfet is turning-on. With this method fast detection is allowed for short-circuit and open-circuit failure with small times for detection which prevents to spread the failure to the full system. To validate the fault detection circuit a boost converter with SiC-Mosfet was designed. Experimental results validate the reliability of the proposal.
KEYWORDS:
Semiconductor, silicon carbide, fault-detection
Semiconductor, carburo de silicio, detección de fallas
RESUMEN: Este artículo presenta el diseño de un circuito de detección de fallas aplicado a Mosfet de carburo de silicio; la detección de falla es realizada a través del monitoreo de comportamiento de la señal de compuerta. Las más importantes características que se analizaron y se reportan son: rápida detección debido a que la evaluación se realiza en la conmutación a encendido, permitiendo la detección de fallas en corto circuito y circuito abierto; tiempos rápidos de detección lo que previene difusión de la falla al sistema completo. Para validar el circuito de detección fue diseñado un convertidor boost con SiC-Mosfet. Los resultados obtenidos validan la confiabilidad de la propuesta presentada.
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1.Introduction
The development of power semiconductors based on materials with wide forbidden band like Silicon Carbide (SiC) has become a viable alternative to replace the actual Silicon power devices due to its advantages like: wider forbidden band (2x), higher electrons speed saturation (2x) and better thermal conductivity (5x). These advantages help to avoid the use of heatsinks improving switching frequency and reducing the switching losses with better stability against temperature [1-4]. The Power-MOS based on (SiC) is one of the devices ready to replace the actual Power-MOS silicon solution mainly in applications with high temperature and high current density like power converters.
The electrical characteristics of the SiC-Mosfet require an early fault detection subsystem to isolate any fault as fast as possible avoiding the damage of the components and protecting the application. In literature have...