Abstract

Quantum ground states that arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO3/SrTiO3 interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect gating and is accompanied with a pseudogap. Here we utilize independent control of carrier density and disorder of the interfacial superconductor using dual electrostatic gates, which enables the comprehensive examination of the electronic phase diagram approaching zero temperature. We find that the pseudogap corresponds to precursor pairing, and the onset of long-range phase coherence forms a two-dimensional superconducting dome as a function of the dual-gate voltages. The gate-tuned superconductor–metal transitions are driven by macroscopic phase fluctuations of Josephson coupled superconducting puddles.

Details

Title
Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system
Author
Chen, Zhuoyu 1   VIAFID ORCID Logo  ; Swartz, Adrian G 1 ; Yoon, Hyeok 2 ; Inoue, Hisashi 1 ; Merz, Tyler A 2 ; Lu, Di 3 ; Xie, Yanwu 1 ; Yuan, Hongtao 4 ; Hikita, Yasuyuki 4 ; Srinivas Raghu 3 ; Hwang, Harold Y 1 

1  Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA; Department of Applied Physics, Stanford University, Stanford, CA, USA; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA 
2  Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA; Department of Applied Physics, Stanford University, Stanford, CA, USA 
3  Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA; Department of Physics, Stanford University, Stanford, CA, USA 
4  Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA 
Pages
1-6
Publication year
2018
Publication date
Oct 2018
Publisher
Nature Publishing Group
e-ISSN
20411723
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1038/s41467-018-06444-2
ProQuest document ID
2115234260
Copyright
© 2018. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.