Abstract

Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS2/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS2/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS2 devices as well as other TMDCs devices contacted by graphene.

Details

Title
Twist angle-dependent conductivities across MoS2/graphene heterojunctions
Author
Liao, Mengzhou 1 ; Wu, Ze-Wen 2 ; Du, Luojun 1 ; Zhang, Tingting 3 ; Zheng, Wei 1 ; Zhu, Jianqi 1 ; Yu, Hua 1 ; Tang, Jian 1 ; Gu, Lin 1   VIAFID ORCID Logo  ; Xing, Yanxia 2 ; Yang, Rong 4 ; Shi, Dongxia 4 ; Yao, Yugui 2 ; Zhang, Guangyu 5 

1  CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China 
2  Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, China 
3  CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China; Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, China 
4  CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China; Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, China 
5  CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China; Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, China; Collaborative Innovation Center of Quantum Matter, Beijing, China 
Pages
1-6
Publication year
2018
Publication date
Oct 2018
Publisher
Nature Publishing Group
e-ISSN
20411723
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1038/s41467-018-06555-w
ProQuest document ID
2116412653
Copyright
© 2018. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.