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1. Introduction
Surface characterization using nonlinear methods offers several advantages due to its nondestructive nature and the ability to investigate many industrial processes in real-time and nonvacuum conditions. In the past, a comprehensive understanding up to the microscopic atomic level of the measured second-harmonic generation (SHG) data—even for low symmetry samples such as diamond lattices—was difficult because surfaces, in their full complexity, are described by a third-rank tensor with up to 27 complex and 81 complex components if using second- and third-harmonic generations, respectively [1, 2]. In a series of papers, Powell et al. [3], Peng et al. [4], and Adles and Aspnes [5] have argued consistently that azimuthal measurements of rotated silicon samples using higher harmonics can be described by the so-called simplified bond-hyperpolarizabilty model (SBHM). The first major finding was that the then available SHG data for Si(111) in Reference [6] could be well fitted by just using two complex parameters, the “up” hyperpolarizibility used for the upward pointing bond and the “down” hyperpolarizibility used for the three downward pointing bonds. Just using these two complex parameters is a major advantage compared to previous phenomenological description for the same case [7–9]. Later on, SBHM was applied to model surface rotational anisotropy (RA) SHG experiment for a nonvicinal Si(111) surface with success [10] although it has recently been shown by using arbitrary input polarization that bulk quadrupolar effects also contribute to SHG [11]. However, SBHM was also criticised and tested against experiment by using Si(111) with different offcut directions and different offcut magnitude [12].
It turned out that the influence of steps due to the miscut is important. In our understanding, this counter argument is not fair because it is well known that steps induce a major effect for the Si(111) case, and therefore, at least a third parameter should be added, only describing the
Another important step towards the understanding of SHG in diamond and zincblende lattices was the investigation of the third-rank susceptibility tensor that was obtained from the simplified bond-hyperpolarizability model (SBHM) and group theory (GT) [14, 15], where it was shown that one can derive from GT the SBHM tensor. The work was later extended to show that the model can fit electric-field-induced second-harmonic (EFISH) experimental results in metal-Oxide semiconductor (MOS) with good accuracy [16]. Further test upon the validity of SBHM to model experimental RASHG data from zincblende samples which are noncentrosymmetric confirmed the existence of bulk dipole radiation as the dominant source of SHG [17].
2. Basic Theory
The simplified bond-hyperpolarizability model (SBHM) is an alternative approach to describe nonlinearity, in particular SHG from materials and interfaces. Even though it is a phenomenological theory requiring the hyperpolarizabilities to be obtained from experimental fitting, it does provide a physical framework in which nonlinear optical (NLO) spectra can be represented and analyzed at the bond level in simple terms. Influenced by the somewhat unfamiliar Ewald–Oseen extinction theorem in linear optics [18–20], where the radiating field from the material is seen as direct superposition from all the dipole fields inside the material, SBHM assumes that a similar approach can be worked out for nonlinear optics. The specific assumptions made in this model are as follows:
(i)
The system consists of (partial) charges localized in bonds, and the applied field
(ii)
Using Newton’s equation of motion, the induced dipole oscillates harmonically and anharmonically with time under the action of the applied electric field and appropriate restoring and dissipation forces.
(iii)
The number of bonds is determined by the amount of the next nearest neighbors; thus, there are eight bonds for bcc and twelve bonds for fcc, originating at each atom.
(iv)
The nonlinear part of motion is summarized in terms of complex hyperpolarizabilities that can be obtained by solving the equation of motion.
(v)
In classical physics, each accelerated charge radiates, and the far field is calculated as the superposition of the fields radiated by each dipole.
(vi)
An additional consideration which has not been described in Reference [3] is the coherent superposition of all atomic dipoles. These, by the external fundamental field coherently driven dipoles, radiate in phase, the fundamental as well as the second-harmonic output. Because the distance between the dipoles is much smaller than the wavelength, the coherent superposition leads the angle of incidence (AOI) equal to angle of excidence (
[figures omitted; refer to PDF]
If we consider second-harmonic and third-harmonic generation, the motion of the charge
At this point, we would like to address several important limitations of our SBHM because exact expression of the local fields
The direction of the j-th bond is defined by the unit vector
It follows that to the lowest order, the induced linear
In macroscopic terms, we can write:
Equation (8) describes the radiation of an arbitrary number of dipoles located in the origin. A possible phase difference between radiated fields of different bonds is reasonably neglected because λ is large against the distance between the nucleus and the bond. Within a typical wavelength, however, there are
Many SHG experiments have been performed at single wavelength by a rotating sample. The azimuthal angle ϕ, which describes a rotation of the system, is allocated to each bond direction by applying the rotation matrix
The s and p polarizations of the incoming and outgoing beams lead to four combinations labeled p-p, p-s, s-p, and s-s, where the first and second letters refer to the polarizations of the incident and emerging beams, respectively. The incoming s- and p-polarized beams are given by
In our contribution, we critically extend the SBHM to calculate the third- and fourth-rank tensors of body-centered cubic (bcc) and face-centered cubic (fcc) lattices. Furthermore, a single dipole radiates in all the solid angles (with the exception of the bond direction) such that according to Reference [3], the SHG radiation should be measureable in all the upper and lower half spaces. Using the Huygens principle, however, leads immediately, by considering the phases of the radiating atomic dipoles, which are driven coherently by the fundamental field, to the fact that SHG radiation of a stratified layer is only allowed into one transmission and reflection direction.
3. FCC and BCC Surface Response
In this section, we apply SBHM to predict SHG response from the surface of body-centered cubic (bcc) and face-centered cubic (fcc) crystal structures. We are aware that SBHM will be problematic for most metals exhibiting this crystal structure because comparison between SHG intensity from metal surfaces with the SBHM profile will produce different results due to the existence of free electrons in metal therefore exceeding contributions from the bounded dipoles along the bonds. However for nonmetal crystals with fcc and bcc structures such as certain chalcogenide semiconductors, SBHM should produce a good approximation of the SHG far field that is reflected from the surface. The bond orientations for the (001), (110), and (111) surfaces of a bcc crystal is presented in Figure 2.
[figures omitted; refer to PDF]
We first define the corresponding unit bond vectors, the unit vector for incoming and outgoing p-polarized beams, and the unit vector for s-polarized beams. For a bcc (001) crystal orientation, we specify the four up bonds to have the same hyperpolarizability
However, for the four down bonds, we assign a down hyperpolarizability
Let us first consider the third-rank tensor which characterizes the crystal response to the incoming second-harmonic field. It is straightforward to see from Equation (6) that the second-order susceptibility tensor is given by the direct product of each bond:
For the case of bcc (001) surface, we just need to insert Equations (10) and (11) into Equation (13) for arbitrary z-axis rotation ϕ and set
It can be seen that the there is only one independent parameter in the third-rank tensor for all the three bcc crystal orientations, namely,
Evaluating Equation (8) for the case of second-harmonic generation and the given bond orientations, we can obtain an expression for the 4 polarization far fields. Summing up the anharmonic bond dipole contributions from all the 8 bonds, and for simplicity writing
It can be seen from symmetry consideration that if the up and down hyperpolarizabilities are the same, bcc crystals will not produce any SHG far field as can be seen by the formulas above. Thus in the bulk where the hyperpolarizabilities are equal, no SHG signal will appear, and the upper and lower bond dipole radiations cancel each other out.
For an fcc crystal structure, we have instead of 8 bonds for a single atom 12 bonds. The orientations of the bonds for (001), (110), and (111) fcc crystal structures are given in Figure 3. For completeness, we provide the bond vectors for the fcc (001) surface. These are the four up bonds with hyperpolarizability
[figures omitted; refer to PDF]
The third-rank tensor for the fcc (001) surface orientation is obtained using Equation (13) as in the bcc surface:
As in the case of the bcc surface, SBHM restricts the fcc surface tensors to have only one independent element which is the effective hyperpolarizability
Repeating the procedure by now summing the far-field contribution from the 12 bonds, we obtain for a (001) fcc structure the following 4 polarization fields:
For a (110) fcc crystal, we get
Again, we can easily see from the obtained formulas that if the up and down hyperpolarizabilities are equal,
4. BCC and FCC Bulk Response
Before proceeding to the discussion of third-harmonic generation (THG), it is instructive to understand that, in principle, the SHG total intensity from measurement such as rotational anisotropy spectroscopy (RAS) from a sample may also contain linear SHG field superposition from within the bulk in a competing magnitude with dipolar SHG contribution from the surface, although it is not of dipolar nature. Indeed Peng et al. mentioned that bulk quadrupolar sources and spatial dispersion may also contribute to the total SHG intensity. It is also possible that electric-field-induced SHG (EFISHG) effects in the interface give additional contribution to the total field. Remarkably such additional sources can also be simulated using SBHM although it will only be discussed briefly here. The bulk quadrupolar contribution can be calculated via
The fields arising from quadrupole, spatial dispersion, and EFISH are linearly mixed together with the surface dipolar SHG field contribution; hence, they may be hard to distinguish in low symmetry lattices although it is possible in some cases to separate their contributions for certain surface orientation using arbitrary polarization [11]. It is thus reasonable to measure the third-harmonic generated far field when probing the bulk especially in centrosymmetric materials where dipolar SHG contribution is forbidden inside the bulk, but dipolar THG and odd-order nonlinear effects are not. This is due to the fact that the number of layers within the bulk involved in generating THG, and it is far larger than the surface THG. Even though the total element in a fourth-rank tensor is 81, it can in many cases be severely simplified especially for low-symmetric structures such as diamond, bcc, and fcc. It is also straightforward to apply SBHM to calculate the fourth-rank tensor, just adding another direct product of the bonds as given in Equation (13):
The hyperpolarizability inside the bulk can be assumed to be the same for all bonds; therefore,
As can be seen, the fourth-rank tensor in Equation (34) consists of a
Remarkably, SBHM only demands—again—one independent parameter inside the fourth-rank tensor. We note here that the Kleinman symmetry is fulfilled for the three bcc bulk orientation, and this is in agreement with the inherent assumption of SBHM [24].
For the fcc (100) bulk, we obtain
The fcc (111) bulk fourth rank tensor can be obtained similarly, but it is not depicted here because it is very lengthy. However, it is easy to infer that it also contains only one independent tensor element which is
5. Conclusion
We have calculated the bcc and fcc third-rank surface susceptibility tensors and its corresponding far field. In addition, we also discuss its bulk nonlinear effects and calculate its fourth-rank tensor. It is remarkable to see that the high-restriction SBHM imposes on both the bcc and fcc surfaces as well as its bulk susceptibility tensors where we have shown that it only requires one independent element to describe SHG and THG radiations in reflection.
Conflicts of Interest
The authors declare that they have no conflicts of interest.
Acknowledgments
This research was supported by the BSLN 2018 grant of the Indonesian Directorate of Research and Higher Education. H.H. would like to thank Kurt Hingerl and the reviewer for their constructive inputs, suggestions, and limitations of our model as well as Martijn de Sterke, Husin Alatas, and Benjamin J. Eggleton for valuable discussion about SHG.
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Abstract
In this work, we describe the third- and fourth-rank tensors of body- and face-centered cubic systems and derive the s- and p-polarized SHG far field using the simplified bond-hyperpolarizability model. We also briefly discuss bulk nonlinear sources in such structures: quadrupole contribution, spatial dispersion, electric-field second-harmonic generation, and third-harmonic generation, deriving the corresponding fourth rank tensor. We show that all the third- and fourth-rank tensorial elements require only one independent fitting parameter.
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1 Theoretical Physics Division, Department of Physics, Bogor Agricultural University, Jl. Meranti, Gedung Wing S, Kampus IPB Darmaga, Bogor 16680, Jawa Barat, Indonesia
2 Center for Surface-and Nanoanalytics, Johannes Kepler University, Altenbergerstr, 69, 4040 Linz, Austria
3 Dirección de Cátedras CONACyT, Comisionado a: Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM Cuernavaca, Mor. 62160, Mexico